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Materials | Free Full-Text | First Principle Calculation of Accurate Electronic and Related Properties of Zinc Blende Indium Arsenide (zb-InAs)
![Mapping of the electronic band gap along the axis of a single InAs/InSb x As 1−x heterostructured nanowire - Nanoscale (RSC Publishing) DOI:10.1039/C6NR06841C Mapping of the electronic band gap along the axis of a single InAs/InSb x As 1−x heterostructured nanowire - Nanoscale (RSC Publishing) DOI:10.1039/C6NR06841C](https://pubs.rsc.org/image/article/2016/NR/c6nr06841c/c6nr06841c-f5_hi-res.gif)
Mapping of the electronic band gap along the axis of a single InAs/InSb x As 1−x heterostructured nanowire - Nanoscale (RSC Publishing) DOI:10.1039/C6NR06841C
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12 Band structure of InAs in the L [111] and X [100] direction. The... | Download Scientific Diagram
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PDF] Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates | Semantic Scholar
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a) The energy gap versus the lattice constant of InAs, GaSb, and AlSb... | Download Scientific Diagram
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Band structure for InAs in the WZ phase, calculated using the mBJ+LDA... | Download Scientific Diagram
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Band parameters of GaAs, InAs, InP, and InSb in the 40-band k⋅p model: Journal of Applied Physics: Vol 107, No 4
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1. Empirical tight-binding sp3s* band structure of GaAs, GaP, AlAs, InAs, C (diamond) and Si — nextnano Manual
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Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog | Science Advances
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